Flash Memory Denoising

Abstract: In this research, a denosing algorithm for error reduction in MLC Flash memory is presented. The scheme framework consists of adding meta data to wordline during write, tuning reference comparison during read, and sorting out the cells in the overlap region between two adjacent voltage distributions.

Bio: Amit Berman is a senior engineer at Samsung, where he leads next-generation signal processing algorithms for memory devices. He received the PhD in electrical engineering from Technion at 2013. He published over 15 research papers in leading venues and holds over 10 US/PCT patent applications. He also serves as adjunct lecturer at the Technion. He is the recipient of several awards, including Mitchell grant, HPI fellowship and international solid-state circuits conference recognition.