Crossbar Resistive RAM for High Density Memory Applications




Abstract: We report 3D-stackable 1S1R passive crossbar RRAM utilizing a Field Assisted Superlinear Threshold (FAST) selector for ultra-high density memory applications. The main barrier in the high density integration of RRAM, the sneak path issue, has been overcome using the FAST selector with the highest reported selectivity of >1E7. We further show that the large selectivity reduces overall system power consumption.

Bio: Sung Hyun Jo is a Senior Fellow of Crossbar Inc. where he leads advanced technology development since 2010. His technology development focus includes emerging nonvolatile memory technologies, with a special interest in RRAM, and programmable logics. Sung Hyun Jo earned his Ph.D. from the University of Michigan, M.S. from Korea Advanced Institute of Science and Technology (KAIST), and B.S. from Yonsei University with high honors. He has over 50 issued and pending patents.