A High Resolution Nonvolatile Analog Memory Ionic Devices

Abstract: This paper reviews our recent work on high resolution nonvolatile analog memory based on electrochemical Pt/a-Si/Ag and valence change Pt/TiO2-x/Pt memristive devices. In particular, we present a simple feedback algorithm which allows tuning the device resistance with a high precision even in the presence of large variations in device switching behavior. The algorithm is experimentally tested on single devices and small scale crossbar circuit.

Bio: Dmitri Strukov research focus is on various aspects of reconfigurable nanoelectronic systems, including resistive switching (\"memristive\") device modeling, circuit architectures, and design automation tools, for applications in digital memories, programmable logic, and in neuromorphic networks. He received a MS in applied physics and mathematics from the Moscow Institute of Physics and Technology in 1999 and a PhD in electrical engineering from Stony Brook University in New York in 2006