An ultra-compact, floating-gate non-volatile current memory array with less than 150ppm/K temperature sensitivity and over 80dB programming range




Abstract: We present a temperature compensated, high density array of floating-gate non-volatile memories that can be used for storing currents ranging from pA to nA. The core of the proposed architecture is a feedback control technique that uses a varactor to adapt the floating-gate capacitance to the temperature dependent factors. Measured results from prototype arrays fabricated in a 0.5um CMOS process demonstrate a temperature sensitivity of 150 ppm/K and programmability down to a few pA.

Bio: Ming Gu received her Ph.D degree in electrical and computer engineering from Michigan State University, East Lansing, MI, in 2012. Her research interests include mixed-signal VLSI circuits design, error-control coding, and analog signal processing. Since January 2012, she has been with iWatt Inc., Campbell, CA, as a senior design engineer. Her current work focuses on power management IC (PMIC) design.