Correcting Errors in MLCs with Bit-fixing Coding

Abstract: Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories have received interest in recent years.This work proposes a new coding scheme that generalizes a known result and works for arbitrary error distributions.In this scheme, every cell\'s discrete level is mapped to its binary representation,where each bit in the binary form belongs to a different ECC.The codewords are decoded sequentially to correct errors.An optimized cell-level labeling scheme is also studied.

Bio: Yue Li is a Ph.D students at Department of Computer Science and Engineering, Texas A&M University. He is working with Prof. Anxiao (Andrew) Jiang. His research focuses on coding techniques for data storage in memories, especially flash memories and phase-change memories. Yue received his BS in information security from Huazhong University of Science and Technology in 2008.