Write Amplification and WOM Codes in Flash Memories




Abstract: Write amplification in a NAND flash system that uses write-once memory (WOM) codes to encode the data stored. It is shown through both analysis and simulation that, with proper parameters, flash memories which use WOM codes can achieve a lower write amplification than in a non-WOM-coded system. For example, for a 16-level per cell flash memory with total overprovisioning of 0.8, the write amplification using a two-write WOM code is 1.2, but using no WOM code the write amplification is 1.4, or $15\\%$ higher.

Bio: Brian M. Kurkoski is an Associate Professor at the Japan Advanced Institute of Science and Technology (JAIST) in the School of Information Science. From 2007 to 2012 he was an Associate Professor at the University of Electro-Communications in Tokyo. He was a JSPS postdoctoral fellow from 2004 to 2006. He received the M.S. and Ph.D. degrees from the University of California San Diego in 2000 and 2004, respectively, and the B.S. degree from the California Institute of Technology in 1993.