Coding Scheme for Optimizing Random I/O Performance




Abstract: Achieving high random read performance, as desired in SSD and mobile applications, for cost efficient high density Multi-Level Cell (MLC) memories is challenging, as reading of a conventionally coded MLC requires multiple sensing operations. In this work we describe a novel coding scheme which optimizes MLC random read performance, by allowing single sense reading operations. The scheme uses WOM codes in a unique way in order to achieve this desired property.

Bio: Eran Sharon is a principal researcher at Sandisk, where he has been working since 2005 on a broad range of research topics in the fields of signal processing, coding, information theory, and memory management for NAND and post NAND memories. Eran holds over 35 patents and has over 100 patent applications in the fields of storage and communication. Eran received his Ph.D. degree in electrical engineering from Tel-Aviv University, Israel, in 2009.