Cell to Cell Interference Mitigation Techniques for Flash Memory

Abstract: NAND multi-level cell flash memories are now widely used due to its low cost and high capacity. However, when the number of cell levels increases, cell-to-cell interference (C2CI) which shifts threshold voltage may degrades the error rate in the reading process. It is known that C2CI is caused by the threshold voltage change of the neighbor cells in the writing operation. To mitigate interference, we propose new signal processing based algorithm and C2CI reduction coding scheme.

Bio: Myeongwoon Jeon received the B.S. and M.S. degrees in Electrical Engineering from Seoul National University, Seoul, Korea, in 2007 and 2009, respectively. He is currently working toward the Ph.D. degree. His current research interests include error correction code, signal processing for flash memory, wireless communication system with multiple antenna (MIMO) detection and sphere decoding.