Access-Devices based on Mixed-Ionic-Electronic-Conduction (MIEC) Materials for Multi-Layer Crosspoint-Memory: Yield, Speed, and Scaling

Abstract: Cost-effective 3D-stacking of large crosspoint arrays requires Access Device (ADs) with very large non-linearity. ADs based on Cu-containing MIEC materials have become an intriguing choice as a 3D-ready selection device for future Non-Volatile Memory (NVM) technologies. In this talk, we’ll present some of the main advantages that these ADs offer (ie, bipolar operation, high ON/OFF ratios with high current densities, scalability, and fast read/write speeds) for future high-density NVM arrays.

Bio: Alvaro Padilla received the B.S. (in Chemical Engineering), M.S., and Ph.D. degrees in Electrical Engineering from UC Berkeley in 1997, 2006, and 2008 respectively. After graduate school, Alvaro worked as a Postdoctoral Research Scholar in the STEEP Project at UC Berkeley. Currently, Alvaro works in the Science & Technology group at IBM\'s Almaden Research Center in San Jose, CA. Alvaro\'s research interests include nanometer-scale memory & logic devices for emerging energy-efficient electronics.