Dynamic Voltage Allocation Based on Mutual Information for NAND Flash Memory

Abstract: This talk introduces a new model for Flash memory where degradation depends on total charge written and erased rather than the number of program/erase cycles. Using this model, we introduce an algorithm that maintains constant information theoretic storage capacity (the storage available in the Flash memory given the current level of degradation) by gradually increasing the charge levels. We provide a numerical example in which the dynamic charge level algorithm increases lifetime by 80%.

Bio: Richard D. Wesel is a Professor and Associate Dean at UCLA. He earned his Ph.D. from Stanford and his B.S. and M.S. from MIT, all in electrical engineering. His research is in the area of communication theory with particular interest in channel coding. He has received the NSF CAREER Award, an Okawa Award, and the HSSEAS Excellence in Teaching Award. He has authored or co-authored over 130 conference and journal publications. For more about his research group see http://www.ee.ucla.edu/~csl/.